1 motorola smallsignal transistors, fets and diodes device data npn silicon maximum ratings rating symbol bc 237 bc 238 bc 239 unit collector emitter voltage v ceo 45 25 25 vdc collector emitter voltage v ces 50 30 30 vdc emitter base voltage v ebo 6.0 5.0 5.0 vdc collector current e continuous i c 100 madc total device dissipation @ t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.0 8.0 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 357 c/w thermal resistance, junction to case r jc 125 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector emitter breakdown voltage bc237 (i c = 2.0 ma, i b = 0) bc238 bc239 v (br)ceo 45 25 25 e e e e e e v emitter base breakdown voltage bc237 (i e = 100 a, i c = 0) bc238 bc239 v (br)ebo 6.0 5.0 5.0 e e e e e e v collector cutoff current (v ce = 30 v, v be = 0) bc238 bc239 (v ce = 50 v, v be = 0) bc237 (v ce = 30 v, v be = 0) t a = 125 c bc238 bc239 (v ce = 50 v, v be = 0) t a = 125 c bc237 i ces e e e e e e 0.2 0.2 0.2 0.2 0.2 0.2 15 15 15 4.0 4.0 4.0 na m a order this document by bc237/d
semiconductor technical data
case 2904, style 17 to92 (to226aa) 1 2 3 ? motorola, inc. 1996 collector 1 2 base 3 emitter rev 1
2 motorola smallsignal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain (i c = 10 m a, v ce = 5.0 v) bc237a bc237b/238b bc237c/238c/239c (i c = 2.0 ma, v ce = 5.0 v) bc237 bc239 bc237a bc237b/238b bc237c/238c/239c (i c = 100 ma, v ce = 5.0 v) bc237a bc237b/238b bc237c/238c/239c h fe e e e 120 120 120 200 380 e e e 90 150 270 e e 170 290 500 120 180 300 e e e 800 800 220 460 800 e e e e collector emitter on voltage (i c = 10 ma, i b = 0.5 ma) bc237/bc238/bc239 (i c = 100 ma, i b = 5.0 ma) bc237/bc239 bc238 v ce(sat) e e 0.07 0.2 0.2 0.6 0.8 v base emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v be(sat) e e 0.6 e 0.83 1.05 v baseemitter on voltage (i c = 100 m a, v ce = 5.0 v) (i c = 2.0 ma, v ce = 5.0 v) (i c = 100 ma, v ce = 5.0 v) v be(on) e 0.55 e 0.5 0.62 0.83 e 0.7 e v dynamic characteristics current gain e bandwidth product (i c = 0.5 ma, v ce = 3.0 v, f = 100 mhz) bc237 bc238 bc239 (i c = 10 ma, v ce = 5.0 v, f = 100 mhz) bc237 bc238 bc239 f t e e e 150 150 150 100 120 140 200 240 280 e e e e e e mhz collectorbase capacitance (v cb = 10 v, i c = 0, f = 1.0 mhz) c obo e e 4.5 pf emitterbase capacitance (v eb = 0.5 v, i c = 0, f = 1.0 mhz) c ibo e 8.0 e pf noise figure (i c = 0.2 ma, v ce = 5.0 v, r s = 2.0 k w , f = 1.0 khz) bc239 (i c = 0.2 ma, v ce = 5.0 v, r s = 2.0 k w , f = 1.0 khz, d f = 200 hz) bc237 bc238 bc239 nf e e e e 2.0 2.0 2.0 2.0 4.0 10 10 4.0 db
3 motorola smallsignal transistors, fets and diodes device data 2.0 1.5 1.0 0.2 0.3 0.4 0.6 0.8 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 i c , collector current (madc) figure 1. normalized dc current gain h fe , normalized dc current gain v ce = 10 v t a = 25 c 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 i c , collector current (madc) figure 2. asaturationo and aono voltages v, voltage (volts) t a = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 400 20 30 40 60 80 100 200 300 0.5 1.0 0.7 2.0 3.0 5.0 7.0 10 20 30 50 i c , collector current (madc) figure 3. currentgain e bandwidth product f t , currentgain e bandwidth product (mhz) c, capacitance (pf) 10 1.0 2.0 3.0 5.0 7.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 v r , reverse voltage (volts) figure 4. capacitances v ce = 10 v t a = 25 c t a = 25 c c ib c ob r b , base spreading resistance (ohms) 170 160 150 140 130 120 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 i c , collector current (madc) figure 5. base spreading resistance v ce = 10 v f = 1.0 khz t a = 25 c
4 motorola smallsignal transistors, fets and diodes device data package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 12.70 l 0.250 6.35 n 0.080 0.105 2.04 2.66 p 0.100 2.54 r 0.115 2.93 v 0.135 3.43 1 case 02904 (to226aa) issue ad style 17: pin 1. collector 2. base 3. emitter motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters can and do vary in different applications. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. how to reach us: usa / europe : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, toshikatsu otsuki, p.o. box 20912; phoenix, arizona 85036. 18004412447 6f seibubutsuryucenter, 3142 tatsumi kotoku, tokyo 135, japan. 0335218315 mfax : rmfax0@email.sps.mot.com t ouchtone (602) 2446609 hong kong : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok r oad, tai po, n.t., hong kong. 85226629298 bc237/d ?
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